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?2008 silicon storage technology, inc. s71279-02-000 02/09 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? high gain: ? typically 30 db gain across 2.4~2.5 ghz over temperature 0c to +80c ? high linear output power: ? >26.5 dbm p1db ? meets 802.11g ofdm acpr requirement up to 23 dbm ? added evm ~4% up to 20 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 24 dbm ? high power-added efficiency/low operating current for both 802.11g/b applications ?~22% @ p out = 22 dbm for 802.11g ?~26% @ p out = 23.5 dbm for 802.11b ? built-in ultra-low i ref power-up/down control ?i ref <4 ma ? low idle current ?~60 ma i cq ? high-speed power-up/down ? turn on/off time (10%~90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +80c ? ~1 db detector variation over 0c to +80c ? low shut-down current (< 0.1 a) ? on-chip power detection ? 25 db dynamic range on-chip power detection ? simple input/output matching ? packages available ? 16-contact vqfn (3mm x 3mm) ? non-pb (lead-free) packages available applications: ? wlan (ieee 802.11g/b) ?home rf ? cordless phones ? 2.4 ghz ism wireless equipment product description the sst12lp14 is a high-performance power amplifier ic based on the highly-reliable ingap/gaas hbt technology. the sst12lp14 can be easily configured for high-power, high-efficiency applications with superb power-added effi- ciency while operating over the 2.4~2.5 ghz frequency band. it typically provides 30 db gain with 22% power- added efficiency @ p out = 22 dbm for 802.11g and 27% power-added efficiency @ p out = 24 dbm for 802.11b. the sst12lp14 has excellent linearity, typically <4% added evm up to 20 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dbm. the sst12lp14 also has wide-range (>25 db), temperature-stable (~1 db over 80c), single-ended/differential power detectors which lower users? cost on power control. the power amplifier ic also features easy board-level usage along with high-speed power-up/down control. ultra- low reference current (total i ref <4 ma) makes the sst12lp14 controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operating current make the sst12lp14 ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications. the sst12lp14 is offered in 16-contact vqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. 2.4 ghz power amplifier sst12lp14 sst12lp142.4 ghz power amplifier
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 2 functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 nc nc 49 11 12 10 13 nc vccb vref1 vref2 det_ref vcc2 rfout rfout det nc 3 rfin rfin nc bias circuit 7 1279 b1.1
data sheet 2.4 ghz power amplifier sst12lp14 3 ?2008 silicon storage technology, inc. s71279-02-000 02/09 pin assignments figure 2: pin assignments for 16-contact vqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. nc 1 no connection unconnected pins. rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled nc 4 no connection unconnected pins. vccb 5 power supply pwr supply voltage for bias circuit vref1 6 pwr 1st stage id le current control vref2 7 pwr 2nd stage id le current control det_ref 8 o on-chip power detector reference det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output vcc2 12 power supply pwr power supply, 2nd stage nc 13 no connection unconnected pins. nc 14 no connection unconnected pins. nc 15 no connection unconnected pins. vcc1 16 power supply pwr power supply, 1st stage t1.0 1279 56 8 16 vcc1 15 14 nc nc 9 11 12 10 13 nc vccb vref1 vref2 det_ref vcc2 rfout rfout det 2 1 4 3 nc rfin rfin nc 7 1279 16-vqfn p1.1 top view (contacts facing down) rf and dc gnd 0
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 4 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figures 3 through 13 for the rf performance. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) supply voltage at pins 5, 12, and 16 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +4.6v reference voltage to pin 6 (v ref1 ) and pin 7 (v ref2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.6v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature: . . . . . . . . . . . . . . . . . . . . . . . . . ?with-pb? units 1 : 240c for 3 seconds 1. certain ?with-pb? package types are capable of 260c for 3 se conds; please consult the factory for the latest information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?non -pb? units: 260c for 3 seconds operating range range ambient temp v cc industrial -40c to +85c 3.3v table 2: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 5, 12, 16 3.0 3.3 4.2 v i cc supply current for 802.11g, 24 dbm 290 ma for 802.11g, 25 dbm 340 ma i cq idle current for 802.11g to meet evm @ 20.5 dbm 55 ma i off shut down current 0.1 a v reg1 reference voltage for 1st stage, with 120 resistor 2.7 2.9 3.1 v v reg2 reference voltage for 2nd stage, with 360 resistor 2.7 2.9 3.1 v v reg1 reference voltage for 1st stage, with 220 resistor 2.9 3.1 3.3 v v reg2 reference voltage for 2nd stage, with 590 resistor 2.9 3.1 3.3 v t2.0 1279
data sheet 2.4 ghz power amplifier sst12lp14 5 ?2008 silicon storage technology, inc. s71279-02-000 02/09 table 3: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -7 dbm 11b signals 23 dbm @ pin = -10 dbm 11g signals 20 dbm g small signal gain 30 31 33 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 dbm added evm @ 20 dbm ou tput with 11g ofdm 54 mbps signal 3 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without trapping capacitors -40 dbc t3.0 1279
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 6 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c figure 3: s-parameters figure 4: input return loss figure 5: in-band gain flatness
data sheet 2.4 ghz power amplifier sst12lp14 7 ?2008 silicon storage technology, inc. s71279-02-000 02/09 typical performan ce characteristics t est c onditions : f1 = 2.45 gh z , f2 = 2.451 gh z figure 6: p out vs p in figure 7: im3 vs p out figure 8: detectors vs p out figure 9: gain vs p out figure 10: pae for two tone
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 8 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, f = 2.45 gh z , 54 m bps 802.11 g ofdm signal figure 11: 802.11g spectrum at 22/23 dbm, dc current 210/240 ma figure 12: 802.11g added evm for 54 mbps 802.11g signal
data sheet 2.4 ghz power amplifier sst12lp14 9 ?2008 silicon storage technology, inc. s71279-02-000 02/09 figure 13: 802.11b spectrum at 24 dbm, dc current consumption 280 ma figure 14: typical schematic for high-power, high-efficiency 802.11b/g applications r1=120 , r2=360 and vreg1=vreg2=2.8~3.0v or r1=220 , r2=590 and vreg1=vreg2=2.9~3.3v 2 5 6 7 8 9 11 16 15 bias circuit 1 50 /150mil 50 rfout 10pf 10pf 2.4pf 50 /140mil 50 rfin vreg1 vreg2 14 13 4.7 f 0.1 f vcc 4 12 10 0.1 f 12nh/06 03 r2 360* r1 120 3 100pf 0.1 f det_ref det 10pf 10pf 2.0pf 100pf 100pf 1279 schematic.0.1
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 10 product ordering information valid combinations for sst12lp14 sst12lp14-qvc SST12LP14-QVCE sst12lp14 evaluation kits sst12lp14-qvc-k SST12LP14-QVCE-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst12lp 14 - qvc e sstxx l p xx -xxx x environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 2.4 ghz power amplifier sst12lp14 11 ?2008 silicon storage technology, inc. s71279-02-000 02/09 packaging diagrams figure 15: 16-contact very-thin quad flat no-lead (vqfn) sst package code: qvc table 4: revision history revision description date 00 ? s71279: sst conversion of data sheet gp1214 jan 2005 01 ? updated document status from prelim inary specification to data sheet apr 2008 02 ? updated ?contact information? on page 12. feb 2009 note: 1. complies with jedec jep95 mo-220i, variant veed except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-0.0 1.7 0.5 bsc see notes 2 and 3 pin #1 0.30 0.18 0.076 1.7 0.2 3.00 0.10 3.00 0.10 0.05 max 0.45 0.35 1.00 0.80 pin #1 top view bottom view side view 1mm
data sheet 2.4 ghz power amplifier sst12lp14 ?2008 silicon storage technology, inc. s71279-02-000 02/09 12 contact information marketing sst communications corp. 5340 alla road, ste. 210 los angeles, ca 90066 tel: 310-577-3600 fax: 310-577-3605 sales and marketing offices north america asia pacific north silicon storage technology, inc. sst macao 1171 sonora court room n, 6th floor, sunnyvale, ca 94086-5308 macao finance center, no. 202a-246, tel: 408-735-9110 rua de pequim, macau fax: 408-735-9036 tel: 853-2870-6022 fax: 853-2870-6023 europe asia pacific south silicon storage technology ltd. sst communications co. mark house 16f-6, no. 75, sec.1, sintai 5 th rd 9-11 queens road sijhih cit y, taipei county 22101 hersham, surrey taiwan, r.o.c. kt12 5lu uk tel: 886-2-8698-1198 tel: 44 (0) 1932-238133 fax: 886-2-8698-1190 fax: 44 (0) 1932-230567 japan korea sst japan sst korea nof tameike bldg, 9f 6f, heungkuk life insurance bldg 6-7 1-1-14 akasaka, minato-ku sunae-dong, bundang-gu, sungnam-si tokyo, japan 107-0052 kyungki-do, korea, 463-020 tel: 81-3-5575-5515 tel: 82-31-715-9138 fax:81-3-5575-5516 fax: 82-31-715-9137 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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